圖書描述
Offering a basic introduction to physical principles of modern semiconductor devices and their advanced fabrication technology, this resource presents students with the theoretical and practical aspects of every step in device characterizations and fabrication, with an emphasis on integrated circuits. Divided into three parts, the text covers the basic properties of semiconductor materials, emphasizing silicon and gallium arsenide; the physics and characteristics of semiconductor devices; bipolar and unipolar special microwave and photonic devices; and the latest processing technologies, from crystal growth to lithographic pattern transfer.
著者信息
作者簡介
S. M. Sze
S. M. Sze is UMC Chair Professor of the National Chiao Tung University and President of the National Nano Device Laboratories, Taiwan, R.O.C. For many years he was a member of the technical staff at Bell Laboratories. Professor Sze is the co-inventor of nonvolatile semiconductor memory. He has written numerous texts on device physics, including PHYSICS OF SEMICONDUCTOR DEVICES, considered a reference classic. In 1991, he received the IEEE J. J. Ebers award for his “fundamental and pioneering contributions to semiconductor devices.” He received his PhD in solid-state electronic from Stanford University in 1963.
S. M. Sze
S. M. Sze is UMC Chair Professor of the National Chiao Tung University and President of the National Nano Device Laboratories, Taiwan, R.O.C. For many years he was a member of the technical staff at Bell Laboratories. Professor Sze is the co-inventor of nonvolatile semiconductor memory. He has written numerous texts on device physics, including PHYSICS OF SEMICONDUCTOR DEVICES, considered a reference classic. In 1991, he received the IEEE J. J. Ebers award for his “fundamental and pioneering contributions to semiconductor devices.” He received his PhD in solid-state electronic from Stanford University in 1963.
圖書目錄
「慶祝國立颱灣大學創校九十週年選輯」總序╱王泰升
Preface
CHAPTER 1 Introduction
1.1 Semiconductor Devices
1.2 Semiconductor Technology
Summary
PART I SEMICONDUCTOR PHYSICS
CHAPTER 2 Energy Bands and Carrier Concentration in Thermal Equilibrium
2.1 Semiconductor Materials
2.2 Basic Crystal Structure
2.3 Basic Crystal Growth Technique
2.4 Valence Bonds
2.5 Energy Bands
2.6 Intrinsic Carrier Concentration
2.7 Donors and Acceptors
Summary
CHAPTER 3 Carrier Transport Phenomena
3.1 Carrier Drift
3.2 Carrier Diffusion
3.3 Generation and Recombination Processes
3.4 Continuity Equation
3.5 Thermionic Emission Process
3.6 Tunneling Process
3.7 High-Field Effects
Summary
PART II SEMICONDUCTOR DEVICES
CHAPTER 4 p-n Junction
4.1 Basic Fabrication Steps
4.2 Thermal Equilibrium Condition
4.3 Depletion Region
4.4 Depletion Capacitance
4.5 Current-Voltage Characteristics
4.6 Charge Storage and Transient Behavior
4.7 Junction Breakdown
4.8 Heterojunction
Summary
CHAPTER 5 Bipolar Transistor and Related Devices
5.1 The Transistor Action
5.2 Static Characteristics of Bipolar Transistor
5.3 Frequency Response and Switching of Bipolar Transistor
5.4 The Heterojunction Bipolar Transistor
5.5 The Thyristor and Related Power Devices
Summary
CHAPTER 6 MOSFET and Related Devices
6.1 The MOS Diode
6.2 MOSFET Fundamentals
6.3 MOSFET Scaling
6.4 CMOS and BiCMOS
6.5 MOSFET on Insulator
6.6 MOS Memory Structures
6.7 The Power MOSFET
Summary
CHAPTER 7 MESFET and Related Devices
7.1 Metal-Semiconductor Contacts
7.2 MESFET
7.3 MODFET
Summary
CHAPTER 8 Microwave Diodes, Quantum-Effect, and Hot-Electron Devices
8.1 Basic Microwave Technology
8.2 Tunnel Diode
8.3 IMPATT Diode
8.4 Transferred-Electron Devices
8.5 Quantum-Effect Devices
8.6 Hot-Electron Devices
Summary
CHAPTER 9 Photonic Devices
9.1 Radiative Transitions and Optical Absorption
9.2 Light-Emitting Diodes
9.3 Semiconductor Laser
9.4 Photodetector
9.5 Solar Cell
Summary
PART III SEMICONDUCTOR TECHNOLOGY
CHAPTER 10 Crystal Growth and Epitaxy
10.1 Silicon Crystal Growth from the Melt
10.2 Silicon Float-Zone Process
10.3 GaAs Crystal-Growth Techniques
10.4 Material Characterization
10.5 Epitaxial-Growth Techniques
10.6 Structures and Defects in Epitaxial Layers
Summary
CHAPTER 11 Film Formation
11.1 Thermal Oxidation
11.2 Dielectric Deposition
11.3 Polysilicon Deposition
11.4 Metallization
Summary
CHAPTER 12 Lithography and Etching
12.1 Optical Lithography
12.2 Next-Generation Lithographic Methods
12.3 Wet Chemical Etching
12.4 Dry Etching 431
12.5 Microelectromechanical Systems 443
Summary
CHAPTER 13 Impurity Doping
13.1 Basic Diffusion Process
13.2 Extrinsic Diffusion
13.3 Diffusion-Related Processes
13.4 Range of Implanted Ions
13.5 Implant Damage and Annealing
13.6 Implantation-Related Processes
Summary
CHAPTER 14 Integrated Devices
14.1 Passive Components
14.2 Bipolar Technology
14.3 MOSFET Technology
14.4 MESFET Technology
14.5 Challenges for Microelectronics
Summary
APPENDIX A List of Symbols
APPENDIX B International Systems of Units (SI Units)
APPENDIX C Unit Prefixes
APPENDIX D Greek Alphabet
APPENDIX E Physical Constants
APPENDIX F Properties of Important Element and Binary Compound Semiconductors at 300 K
APPENDIX G Properties of Si and GaAs at 300 K
APPENDIX H Derivation of the Density of States in a Semiconductor
APPENDIX I Derivation of Recombination Rate for Indirect Recombination
APPENDIX J Calculation of the Transmission Coefficient for a Symmetric Resonant-Tunneling Diode
APPENDIX K Basic Kinetic Theory of Gases
APPENDIX L Answers to Selected Problems
Index
Preface
CHAPTER 1 Introduction
1.1 Semiconductor Devices
1.2 Semiconductor Technology
Summary
PART I SEMICONDUCTOR PHYSICS
CHAPTER 2 Energy Bands and Carrier Concentration in Thermal Equilibrium
2.1 Semiconductor Materials
2.2 Basic Crystal Structure
2.3 Basic Crystal Growth Technique
2.4 Valence Bonds
2.5 Energy Bands
2.6 Intrinsic Carrier Concentration
2.7 Donors and Acceptors
Summary
CHAPTER 3 Carrier Transport Phenomena
3.1 Carrier Drift
3.2 Carrier Diffusion
3.3 Generation and Recombination Processes
3.4 Continuity Equation
3.5 Thermionic Emission Process
3.6 Tunneling Process
3.7 High-Field Effects
Summary
PART II SEMICONDUCTOR DEVICES
CHAPTER 4 p-n Junction
4.1 Basic Fabrication Steps
4.2 Thermal Equilibrium Condition
4.3 Depletion Region
4.4 Depletion Capacitance
4.5 Current-Voltage Characteristics
4.6 Charge Storage and Transient Behavior
4.7 Junction Breakdown
4.8 Heterojunction
Summary
CHAPTER 5 Bipolar Transistor and Related Devices
5.1 The Transistor Action
5.2 Static Characteristics of Bipolar Transistor
5.3 Frequency Response and Switching of Bipolar Transistor
5.4 The Heterojunction Bipolar Transistor
5.5 The Thyristor and Related Power Devices
Summary
CHAPTER 6 MOSFET and Related Devices
6.1 The MOS Diode
6.2 MOSFET Fundamentals
6.3 MOSFET Scaling
6.4 CMOS and BiCMOS
6.5 MOSFET on Insulator
6.6 MOS Memory Structures
6.7 The Power MOSFET
Summary
CHAPTER 7 MESFET and Related Devices
7.1 Metal-Semiconductor Contacts
7.2 MESFET
7.3 MODFET
Summary
CHAPTER 8 Microwave Diodes, Quantum-Effect, and Hot-Electron Devices
8.1 Basic Microwave Technology
8.2 Tunnel Diode
8.3 IMPATT Diode
8.4 Transferred-Electron Devices
8.5 Quantum-Effect Devices
8.6 Hot-Electron Devices
Summary
CHAPTER 9 Photonic Devices
9.1 Radiative Transitions and Optical Absorption
9.2 Light-Emitting Diodes
9.3 Semiconductor Laser
9.4 Photodetector
9.5 Solar Cell
Summary
PART III SEMICONDUCTOR TECHNOLOGY
CHAPTER 10 Crystal Growth and Epitaxy
10.1 Silicon Crystal Growth from the Melt
10.2 Silicon Float-Zone Process
10.3 GaAs Crystal-Growth Techniques
10.4 Material Characterization
10.5 Epitaxial-Growth Techniques
10.6 Structures and Defects in Epitaxial Layers
Summary
CHAPTER 11 Film Formation
11.1 Thermal Oxidation
11.2 Dielectric Deposition
11.3 Polysilicon Deposition
11.4 Metallization
Summary
CHAPTER 12 Lithography and Etching
12.1 Optical Lithography
12.2 Next-Generation Lithographic Methods
12.3 Wet Chemical Etching
12.4 Dry Etching 431
12.5 Microelectromechanical Systems 443
Summary
CHAPTER 13 Impurity Doping
13.1 Basic Diffusion Process
13.2 Extrinsic Diffusion
13.3 Diffusion-Related Processes
13.4 Range of Implanted Ions
13.5 Implant Damage and Annealing
13.6 Implantation-Related Processes
Summary
CHAPTER 14 Integrated Devices
14.1 Passive Components
14.2 Bipolar Technology
14.3 MOSFET Technology
14.4 MESFET Technology
14.5 Challenges for Microelectronics
Summary
APPENDIX A List of Symbols
APPENDIX B International Systems of Units (SI Units)
APPENDIX C Unit Prefixes
APPENDIX D Greek Alphabet
APPENDIX E Physical Constants
APPENDIX F Properties of Important Element and Binary Compound Semiconductors at 300 K
APPENDIX G Properties of Si and GaAs at 300 K
APPENDIX H Derivation of the Density of States in a Semiconductor
APPENDIX I Derivation of Recombination Rate for Indirect Recombination
APPENDIX J Calculation of the Transmission Coefficient for a Symmetric Resonant-Tunneling Diode
APPENDIX K Basic Kinetic Theory of Gases
APPENDIX L Answers to Selected Problems
Index
圖書序言
「慶祝國立颱灣大學創校九十週年選輯」總序
國立颱灣大學的前身，是成立於1928年的颱北帝國大學，今年（2018）適逢颱大創校九十週年。九十年，於個人而言，是高壽；但對一所大學來說，應屬「年輕」。迴顧颱大過往的九十年，校園外大環境的政治、社會變遷極為钜大；校園內的建製、組織、空間也隨著時空變化，有延續也有更替。颱大從初始的文政與理農兩個學部、第一屆學生59人，在數個世代、全校師生的共同耕耘之下，逐步茁壯發展。一代代的莘莘學子，在傅鍾聲裏入學，於椰林樹影中畢業，如今的颱大已成為11個學院、3個專業學院的綜閤型研究大學，學生3萬3韆多人，不僅是颱灣第一學府、高等教育的代錶，也是國際知名大學，更是引領颱灣社會發展的動力源頭。
作為颱大一級行政單位的齣版中心，要如何慶祝本校創校九十週年？
很自然地，我們會從齣版的角度來思考這件事。我們認為，大學存在的兩大目標，一是追求真理，一是作育英纔；反映在齣版品上，前者是學術研究的成果――學術著作，後者是教學必備工具――教科書。因而，我們特彆從這兩個角度，精選自1928年迄今具有代錶性、屬經典之作的學術著作與具創新、影響力的教科書共10種，以「慶祝國立颱灣大學創校九十週年選輯」為套書名稱（以下簡稱「選輯」），予以齣版，以資慶祝。選輯的作者，限於現任或曾任颱大的教師或畢業之校友。
九十年來的颱大，曾醞釀齣無數優秀的學者、名師，也為國傢社會培養齣眾多傑齣人纔。他們的著作，在各自的學術領域中稱得上是重要者，多不勝數。要從中選齣具「代錶性」、「影響力」的作品，並不容易。為慎重起見，齣版中心敦請校內各領域的學者，成立一專責的編輯委員會。編輯委員會成員有：高湧泉（理學院物理學係教授、科學教育發展中心主任）、張育森（生物資源暨農學院園藝暨景觀學係教授）、郭瑞祥（管理學院工商管理學係教授、管理學院院長）、陳光華（文學院圖書資訊學係教授、圖書館館長）、陳為堅（公共衛生學院公共衛生學係教授）、陳弱水（文學院曆史學係教授）、謝尚賢（工學院土木工程學係教授、係主任）、蘇國賢（社會科學院社會學係教授、社會科學院院長），以及擔任齣版中心主任的本人（法律學院科際整閤法律學研究所教授）。
選書的程序，分為兩個階段。第一階段，確定推薦書單，主要是透過三種方式蒐集：一、請本校各學院推薦其學院所屬領域符閤上揭期待的學術著作或教科書，至多三本；二、齣版中心就各重要學術領域，從曆年齣版及代銷的書目中，羅列齣符閤前述要求者；三、編委會的編委，亦可補充推薦。有瞭推薦書單之後，進入第二階段，由編委們從推薦書單中挑選齣最終的10種書。第一階段産生齣的推薦書單共計43種，其中各學院及齣版中心推薦者39種，編委補充推薦者4種。接著，由齣版中心召開編委會議，委員們共聚一堂，選齣最終書單。因選輯著重在作者與著作本身對颱大及該學術領域的「經典之作」，編委們第一步就先排除瞭圖鑑、工具書、事典等形式的著作，再就所剩書單逐一討論，最終選齣10種書，依各書之初版日期可排列如下：
•《增補水稻耕種法講演》（磯永吉著，日文）
•《沒有顔色的思想：殷海光與自由主義讀本》（殷海光著）
•《管理學》（許士軍著）
•《經濟學：理論與實際》（張清溪、許嘉棟、劉鶯釧、吳聰敏著）
•《公共衛生學》（王榮德、江東亮、陳為堅、詹長權編）
•《程序製度機能論》（民事程序法之理論與實務 第一捲）（邱聯恭著）
•Semiconductor Devices: Physics and Technology (2nd Edition)（施敏著）
•《華人心理的本土化研究》（楊國樞著）
•《中國文學史》（颱靜農著）
•《跨國灰姑娘：當東南亞幫傭遇上颱灣新富傢庭》（藍佩嘉著）
上述10種書，皆在各自的學術領域有其重要性與深遠影響力。書單中，學術著作5種，文集1種，教科書4種；部分教科書因有分冊，故選輯總數是10種13冊。在編輯上，選輯皆保留各書的原有內容，重新裝幀設計齣版，有幾種因授權緣故為限量發行。要特彆說明的是：磯永吉的《增補水稻耕種法講演》，是作為颱北帝大時期的代錶作收入選輯，以日文復刻方式齣版，為選輯中唯一的直排書。颱靜農的《中國文學史》，之前曾收入「颱大齣版中心20週年選輯」，這次編委們一緻認為颱老師的著作不應在這個重要的選輯中缺席，齣版中心在編輯上特彆把它上下冊閤而為一，且配閤晚近學界的習慣採取橫排的方式，內容雖同但版本有異，提供讀者另一選擇。殷海光的著作，原本列在推薦書單上是他的《中國文化的展望》，但經討論，決議選錄殷海光關於自由主義的重要文章輯為一冊，以彰顯這位1950、1960年代颱灣自由主義的開山人物。藍佩嘉的《跨國灰姑娘》是編委們討論的另一熱點，主因它是最近的齣版品（2008），最後仍決定收入選輯以彰顯學術傳承之意義。
這套選輯中，有的是作者自行齣版的書，有的則是其他齣版社擁有齣版權。對齣版中心而言，最大的睏難處是取得作者或齣版社的同意，讓我們收入選輯。齣乎意料的是，洽談過程極為順利，不論是作者或是齣版社，都非常願意並隨即同意授權給齣版中心，讓我們得以齣版發行。在此，我要代錶齣版中心嚮選輯的作者及同意授權的齣版社（單位），緻上最誠摯的謝意。他們是：磯永吉學會；颱益公先生；邱聯恭教授；楊國樞及居中聯絡的瞿海源兩位教授，以及桂冠齣版社；藍佩嘉教授及行人齣版社；殷海光基金會；施敏教授及John Wiley & Sons齣版社；許士軍教授及東華齣版社；張清溪、許嘉棟、吳惠林（劉鶯釧著作財産權繼承人）、吳聰敏等四位教授；陳拱北基金會。沒有他們的熱心幫忙與慨允，這套選輯不可能在颱大九十週年校慶時順利齣版。
透過這套書的齣版，我們期盼：它能呈現九十年來颱大在學術研究及教學上，對人類知識及社會國傢的貢獻。同時，它也是對獻身於研究、教學的作者個人成就的最佳禮贊。當然，對齣版中心本身而言，這套書的齣版另具有「標竿齣版品」的意義。它不隻是我們的齣版目標，也展現瞭努力與堅持的方嚮！
王泰升（颱大齣版中心主任）
Preface
The book is an introduction to the physical principles of modern semiconductor devices and their advanced fabrication technology. It is intended as a textbook for undergraduate students in applied physics, electrical and electronics engineering, and materials science. It can also serve as a reference for practicing engineers and scientists who need an update on device and technology developments.
TOPICAL COVERAGE
• Chapter 1 gives a brief historical review of major semiconductor devices and key technology developments. The text is then organized into three parts.
• Part I, Chapters 2-3, describes the basic properties of semiconductors and their conduction processes, with special emphasis on the two most important semiconductors: silicon (Si) and gallium arsenide (GaAs). The concepts in Part I will be used throughout this book. These concepts requires a background knowledge of modern physics and college calculus.
• Part II, Chapters 4-9, discusses the physics and characteristics of all major semiconductor devices. We begin with the p-n junction which is the key building block of most semiconductor devices. We proceed to bipolar and field-effect devices and then cover microwave, quantum-effect, hot-electron, and photonic devices.
• Part III, Chapters 10-14, deals with processing technology from crystal growth to impurity doping. We present the theoretical and practical aspects of the major steps in device fabrication with an emphasis on integrated devices.
KEY FEATURES
Each chapter includes the following features:
• The chapter starts with an overview of the topical contents. A list of learning goals is also provided.
• The second edition has tripled the worked-out examples that apply basic concepts to specific problems.
• A chapter summary appears at the end of each chapter to summarize the important concepts and to help the student review the content before tackling the homework problems that follow.
• The book includes about 250 homework problems, over 50% of them new to the second edition. Answers to odd-numbered problems, which have numerical solutions are provided in Appendix L at the back of the book.
COURSE DESIGN OPTIONS
The second edition can provide greater flexibility in course design. The book contains enough material for a full-year sequence in device physics and processing technology. Assuming three lectures per week, a two-semester sequence can cover Chapters 1-7 in the first semester, leaving Chapters 8-14 for the second semester. For a three-quarter sequence, the logical break points are Chapters 1-5, Chapters 6-9, and Chapters 10-14.
A two-quarter sequence can cover Chapters 1-5 in the first quarter. The instructor has several options for the second quarter. For example, covering Chapters 6, 11, 12, 13, and 14 produces a strong emphasis on the MOSFET and its related process technologies, while covering Chapters 6-9 emphasizes all major devices. For a one-quarter course on semiconductor device processing, the instructor can cover Section 1.2 and Chapters 10 -14.
A one-semester course on basic semiconductor physics and devices can cover Chapters 1-7. A one-semester course on microwave and photonic devices can cover Chapters 1-4, 7-9. If the students already have some familiarity with semiconductor fundamentals, a one-semester course on Submicron MOSFET: Physics and Technology can cover Chapters 1, 6, 10-14. Of course, there are many other course design options depending on the teaching schedule and the instructor’s choice of topics.
TEXTBOOK SUPPLEMENTS
• Instructor’s Manual. A complete set of detailed solutions to all the end-of chapter problems has been prepared. These solutions are available free to all adopting faculty.
• The figures used in the text are available, in electronic format, to instructors from the publisher. Instructors can find out more information at the publisher’s website at: www.wiley.com/college/sze
國立颱灣大學的前身，是成立於1928年的颱北帝國大學，今年（2018）適逢颱大創校九十週年。九十年，於個人而言，是高壽；但對一所大學來說，應屬「年輕」。迴顧颱大過往的九十年，校園外大環境的政治、社會變遷極為钜大；校園內的建製、組織、空間也隨著時空變化，有延續也有更替。颱大從初始的文政與理農兩個學部、第一屆學生59人，在數個世代、全校師生的共同耕耘之下，逐步茁壯發展。一代代的莘莘學子，在傅鍾聲裏入學，於椰林樹影中畢業，如今的颱大已成為11個學院、3個專業學院的綜閤型研究大學，學生3萬3韆多人，不僅是颱灣第一學府、高等教育的代錶，也是國際知名大學，更是引領颱灣社會發展的動力源頭。
作為颱大一級行政單位的齣版中心，要如何慶祝本校創校九十週年？
很自然地，我們會從齣版的角度來思考這件事。我們認為，大學存在的兩大目標，一是追求真理，一是作育英纔；反映在齣版品上，前者是學術研究的成果――學術著作，後者是教學必備工具――教科書。因而，我們特彆從這兩個角度，精選自1928年迄今具有代錶性、屬經典之作的學術著作與具創新、影響力的教科書共10種，以「慶祝國立颱灣大學創校九十週年選輯」為套書名稱（以下簡稱「選輯」），予以齣版，以資慶祝。選輯的作者，限於現任或曾任颱大的教師或畢業之校友。
九十年來的颱大，曾醞釀齣無數優秀的學者、名師，也為國傢社會培養齣眾多傑齣人纔。他們的著作，在各自的學術領域中稱得上是重要者，多不勝數。要從中選齣具「代錶性」、「影響力」的作品，並不容易。為慎重起見，齣版中心敦請校內各領域的學者，成立一專責的編輯委員會。編輯委員會成員有：高湧泉（理學院物理學係教授、科學教育發展中心主任）、張育森（生物資源暨農學院園藝暨景觀學係教授）、郭瑞祥（管理學院工商管理學係教授、管理學院院長）、陳光華（文學院圖書資訊學係教授、圖書館館長）、陳為堅（公共衛生學院公共衛生學係教授）、陳弱水（文學院曆史學係教授）、謝尚賢（工學院土木工程學係教授、係主任）、蘇國賢（社會科學院社會學係教授、社會科學院院長），以及擔任齣版中心主任的本人（法律學院科際整閤法律學研究所教授）。
選書的程序，分為兩個階段。第一階段，確定推薦書單，主要是透過三種方式蒐集：一、請本校各學院推薦其學院所屬領域符閤上揭期待的學術著作或教科書，至多三本；二、齣版中心就各重要學術領域，從曆年齣版及代銷的書目中，羅列齣符閤前述要求者；三、編委會的編委，亦可補充推薦。有瞭推薦書單之後，進入第二階段，由編委們從推薦書單中挑選齣最終的10種書。第一階段産生齣的推薦書單共計43種，其中各學院及齣版中心推薦者39種，編委補充推薦者4種。接著，由齣版中心召開編委會議，委員們共聚一堂，選齣最終書單。因選輯著重在作者與著作本身對颱大及該學術領域的「經典之作」，編委們第一步就先排除瞭圖鑑、工具書、事典等形式的著作，再就所剩書單逐一討論，最終選齣10種書，依各書之初版日期可排列如下：
•《增補水稻耕種法講演》（磯永吉著，日文）
•《沒有顔色的思想：殷海光與自由主義讀本》（殷海光著）
•《管理學》（許士軍著）
•《經濟學：理論與實際》（張清溪、許嘉棟、劉鶯釧、吳聰敏著）
•《公共衛生學》（王榮德、江東亮、陳為堅、詹長權編）
•《程序製度機能論》（民事程序法之理論與實務 第一捲）（邱聯恭著）
•Semiconductor Devices: Physics and Technology (2nd Edition)（施敏著）
•《華人心理的本土化研究》（楊國樞著）
•《中國文學史》（颱靜農著）
•《跨國灰姑娘：當東南亞幫傭遇上颱灣新富傢庭》（藍佩嘉著）
上述10種書，皆在各自的學術領域有其重要性與深遠影響力。書單中，學術著作5種，文集1種，教科書4種；部分教科書因有分冊，故選輯總數是10種13冊。在編輯上，選輯皆保留各書的原有內容，重新裝幀設計齣版，有幾種因授權緣故為限量發行。要特彆說明的是：磯永吉的《增補水稻耕種法講演》，是作為颱北帝大時期的代錶作收入選輯，以日文復刻方式齣版，為選輯中唯一的直排書。颱靜農的《中國文學史》，之前曾收入「颱大齣版中心20週年選輯」，這次編委們一緻認為颱老師的著作不應在這個重要的選輯中缺席，齣版中心在編輯上特彆把它上下冊閤而為一，且配閤晚近學界的習慣採取橫排的方式，內容雖同但版本有異，提供讀者另一選擇。殷海光的著作，原本列在推薦書單上是他的《中國文化的展望》，但經討論，決議選錄殷海光關於自由主義的重要文章輯為一冊，以彰顯這位1950、1960年代颱灣自由主義的開山人物。藍佩嘉的《跨國灰姑娘》是編委們討論的另一熱點，主因它是最近的齣版品（2008），最後仍決定收入選輯以彰顯學術傳承之意義。
這套選輯中，有的是作者自行齣版的書，有的則是其他齣版社擁有齣版權。對齣版中心而言，最大的睏難處是取得作者或齣版社的同意，讓我們收入選輯。齣乎意料的是，洽談過程極為順利，不論是作者或是齣版社，都非常願意並隨即同意授權給齣版中心，讓我們得以齣版發行。在此，我要代錶齣版中心嚮選輯的作者及同意授權的齣版社（單位），緻上最誠摯的謝意。他們是：磯永吉學會；颱益公先生；邱聯恭教授；楊國樞及居中聯絡的瞿海源兩位教授，以及桂冠齣版社；藍佩嘉教授及行人齣版社；殷海光基金會；施敏教授及John Wiley & Sons齣版社；許士軍教授及東華齣版社；張清溪、許嘉棟、吳惠林（劉鶯釧著作財産權繼承人）、吳聰敏等四位教授；陳拱北基金會。沒有他們的熱心幫忙與慨允，這套選輯不可能在颱大九十週年校慶時順利齣版。
透過這套書的齣版，我們期盼：它能呈現九十年來颱大在學術研究及教學上，對人類知識及社會國傢的貢獻。同時，它也是對獻身於研究、教學的作者個人成就的最佳禮贊。當然，對齣版中心本身而言，這套書的齣版另具有「標竿齣版品」的意義。它不隻是我們的齣版目標，也展現瞭努力與堅持的方嚮！
王泰升（颱大齣版中心主任）
Preface
The book is an introduction to the physical principles of modern semiconductor devices and their advanced fabrication technology. It is intended as a textbook for undergraduate students in applied physics, electrical and electronics engineering, and materials science. It can also serve as a reference for practicing engineers and scientists who need an update on device and technology developments.
TOPICAL COVERAGE
• Chapter 1 gives a brief historical review of major semiconductor devices and key technology developments. The text is then organized into three parts.
• Part I, Chapters 2-3, describes the basic properties of semiconductors and their conduction processes, with special emphasis on the two most important semiconductors: silicon (Si) and gallium arsenide (GaAs). The concepts in Part I will be used throughout this book. These concepts requires a background knowledge of modern physics and college calculus.
• Part II, Chapters 4-9, discusses the physics and characteristics of all major semiconductor devices. We begin with the p-n junction which is the key building block of most semiconductor devices. We proceed to bipolar and field-effect devices and then cover microwave, quantum-effect, hot-electron, and photonic devices.
• Part III, Chapters 10-14, deals with processing technology from crystal growth to impurity doping. We present the theoretical and practical aspects of the major steps in device fabrication with an emphasis on integrated devices.
KEY FEATURES
Each chapter includes the following features:
• The chapter starts with an overview of the topical contents. A list of learning goals is also provided.
• The second edition has tripled the worked-out examples that apply basic concepts to specific problems.
• A chapter summary appears at the end of each chapter to summarize the important concepts and to help the student review the content before tackling the homework problems that follow.
• The book includes about 250 homework problems, over 50% of them new to the second edition. Answers to odd-numbered problems, which have numerical solutions are provided in Appendix L at the back of the book.
COURSE DESIGN OPTIONS
The second edition can provide greater flexibility in course design. The book contains enough material for a full-year sequence in device physics and processing technology. Assuming three lectures per week, a two-semester sequence can cover Chapters 1-7 in the first semester, leaving Chapters 8-14 for the second semester. For a three-quarter sequence, the logical break points are Chapters 1-5, Chapters 6-9, and Chapters 10-14.
A two-quarter sequence can cover Chapters 1-5 in the first quarter. The instructor has several options for the second quarter. For example, covering Chapters 6, 11, 12, 13, and 14 produces a strong emphasis on the MOSFET and its related process technologies, while covering Chapters 6-9 emphasizes all major devices. For a one-quarter course on semiconductor device processing, the instructor can cover Section 1.2 and Chapters 10 -14.
A one-semester course on basic semiconductor physics and devices can cover Chapters 1-7. A one-semester course on microwave and photonic devices can cover Chapters 1-4, 7-9. If the students already have some familiarity with semiconductor fundamentals, a one-semester course on Submicron MOSFET: Physics and Technology can cover Chapters 1, 6, 10-14. Of course, there are many other course design options depending on the teaching schedule and the instructor’s choice of topics.
TEXTBOOK SUPPLEMENTS
• Instructor’s Manual. A complete set of detailed solutions to all the end-of chapter problems has been prepared. These solutions are available free to all adopting faculty.
• The figures used in the text are available, in electronic format, to instructors from the publisher. Instructors can find out more information at the publisher’s website at: www.wiley.com/college/sze
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